-
Notifications
You must be signed in to change notification settings - Fork 8
/
Copy pathall_devices.lib
455 lines (430 loc) · 13.6 KB
/
all_devices.lib
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
287
288
289
290
291
292
293
294
295
296
297
298
299
300
301
302
303
304
305
306
307
308
309
310
311
312
313
314
315
316
317
318
319
320
321
322
323
324
325
326
327
328
329
330
331
332
333
334
335
336
337
338
339
340
341
342
343
344
345
346
347
348
349
350
351
352
353
354
355
356
357
358
359
360
361
362
363
364
365
366
367
368
369
370
371
372
373
374
375
376
377
378
379
380
381
382
383
384
385
386
387
388
389
390
391
392
393
394
395
396
397
398
399
400
401
402
403
404
405
406
407
408
409
410
411
412
413
414
415
416
417
418
419
420
421
422
423
424
425
426
427
428
429
430
431
432
433
434
435
436
437
438
439
440
441
442
443
444
445
446
447
448
449
450
451
452
453
454
455
*
.SUBCKT BS250P 3 4 5
* D G S
M1 3 2 5 5 MBS250
RG 4 2 160
RL 3 5 1.2E8
C1 2 5 47E-12
C2 3 2 10E-12
D1 3 5 DBS250
*
.MODEL MBS250 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277
+CBD=105E-12 PB=1 LAMBDA=1.2E-2
.MODEL DBS250 D IS=2E-13 RS=0.309
.ENDS BS250P
*
*
*ZETEX 2N7000 Spice model Last revision 3/5/00
*
.SUBCKT 2N7000_ZX 3 4 5
* Nodes D G S
M1 3 2 5 5 MOD1
RG 4 2 343
RL 3 5 6E6
C1 2 5 23.5P
C2 3 2 4.5P
D1 5 3 DIODE1
*
.MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296
+CBD=53.5P PB=1 LAMBDA=267E-6
.MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222
.ENDS 2N7000_ZX
*
.model Q2SC2240 NPN(Is=1.41f Xti=3 Eg=1.11 Vaf=100 Bf=310 Ne=1.5 Ise=0
+ Ikf=70m Xtb=1.5 Br=.8893 Nc=2 Isc=0 Ikr=0 Rc=30 Cjc=6.878p
+ Mjc=.2725 Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
+ Tf=1.276n Itf=0 Vtf=0 Xtf=0)
* TOSHIBA 90-01-29 creation
**********
*SRC=2SA970;QSA970;BJTs PNP;Amplifier;120 V .1A
.MODEL QSA970 PNP (IS=10.1F NF=1 BF=426 VAF=197 IKF=60M ISE=2.38P NE=2
+ BR=4 NR=1 VAR=20 IKR=90M RE=13.1 RB=52.6 RC=5.26 XTB=1.5
+ CJE=38.6P VJE=1.1 MJE=.5 CJC=12.4P VJC=.3 MJC=.3 TF=1.59N TR=1.1U)
* 120 Volt .1 Amp 100 MHz SiPNP Transistor 07-28-1995
*QSA970, TOSHIBA
**********
.SUBCKT IRF610_IR 1 2 3
**************************************
* Model Generated by MODPEX *
*Copyright(c) Symmetry Design Systems*
* All Rights Reserved *
* UNPUBLISHED LICENSED SOFTWARE *
* Contains Proprietary Information *
* Which is The Property of *
* SYMMETRY OR ITS LICENSORS *
*Commercial Use or Resale Restricted *
* by Symmetry License Agreement *
**************************************
* Model generated on Oct 29, 97
* MODEL FORMAT: SPICE3
* Symmetry POWER MOS Model (Version 1.0)
* External Node Designations
* Node 1 -> Drain
* Node 2 -> Gate
* Node 3 -> Source
M1 9 7 8 8 MM L=100u W=100u
* Default values used in MM:
* The voltage-dependent capacitances are
* not included. Other default values are:
* RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0
.MODEL MM NMOS LEVEL=1 IS=1e-32
+VTO=3.94473 LAMBDA=0.00953957 KP=0.484056
+CGSO=1.26059e-06 CGDO=1.00178e-11
RS 8 3 0.0001
D1 3 1 MD
.MODEL MD D IS=1.6866e-09 RS=0.0538695 N=1.49978 BV=200
+IBV=0.00025 EG=1.2 XTI=4 TT=0
+CJO=1.59879e-10 VJ=2.42435 M=0.605977 FC=0.5
RDS 3 1 1e+06
RD 9 1 1.14151
RG 2 7 5.34748
D2 4 5 MD1
* Default values used in MD1:
* RS=0 EG=1.11 XTI=3.0 TT=0
* BV=infinite IBV=1mA
.MODEL MD1 D IS=1e-32 N=50
+CJO=2.10468e-10 VJ=1.4522 M=0.87562 FC=1e-08
D3 0 5 MD2
* Default values used in MD2:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* BV=infinite IBV=1mA
.MODEL MD2 D IS=1e-10 N=0.4 RS=3e-06
RL 5 10 1
FI2 7 9 VFI2 -1
VFI2 4 0 0
EV16 10 0 9 7 1
CAP 11 10 4.00016e-10
FI1 7 9 VFI1 -1
VFI1 11 6 0
RCAP 6 10 1
D4 0 6 MD3
* Default values used in MD3:
* EG=1.11 XTI=3.0 TT=0 CJO=0
* RS=0 BV=infinite IBV=1mA
.MODEL MD3 D IS=1e-10 N=0.4
.ENDS IRF610_IR
**********
*SRC=IRF9610S;IRF9610S;MOSFETs P;Power >100V;200V 2A 3ohm
*SYM=POWMOSP
*PINOUT SMD-220
.SUBCKT IRF9610S 10 20 40
* TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 1.42
RS 30 3 76M
RG 20 2 83.3
CGS 2 3 155P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 193P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 3 DSUB
LS 30 40 7.5N
.MODEL DMOS PMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=2M VTO=-3.1 KP=0.865)
.MODEL DCGD D (CJO=193P VJ=0.6 M=0.68)
.MODEL DSUB D (IS=7.47N N=1.5 RS=2.81 BV=200 CJO=151P VJ=0.8 M=0.42 TT=240N)
.MODEL DLIM D (IS=100U)
.ENDS
**********
* GENERIC FUNCTIONAL EQUIVALENT = 1N5245
* MANUFACTURER = SPRAGUE
* TYPE: DIODE
* SUBTYPE: VOLTAGE REG GP
* THIS IS A TEMPERATURE TRACKING MODEL CONSTRUCTED FROM MEASUREMENTS
* THE MODEL IS INTENDED FOR USE FROM -55 C TO 125 C. NO RADIATION EFFECTS
* ARE INCLUDED. SIMULATIONS USING THIS MODEL REPRESENT THE RESPONSES OF
* NOMINAL DEVICES AND SIMULATIONS ARE ACCURATE WITHIN THE LIMITS OF THE
* PRODUCT SPECIFICATION.
*** CAUTION: THE SIMULATED TRR RANGES FROM 73 TO 96% OF THE MEASURED TRR.
* THIS COULD POTENTIALLY LEAD TO ERRORS IN CIRCUIT. SIMULATIONS IF
* USED IN HIGH SPEED SWITCHING APPLICATIONS.
.SUBCKT D1N5245/TEMP 1 3
D1 1 3 DFOR
D2 3 2 DBLOCK
D3 3 1 DLEAK
IC 1 2 1.46
RC 2 1 10 TC = 7.62E-04 , -3.77E-08
*
.MODEL DBLOCK D(
+ IS = 1E-12
+ RS = 0
+ N = 0.6
+ TT = 0
+ CJO = 0
+ VJ = 1
+ M = .5
+ EG = .1
+ XTI = -3.86
+ KF = 0
+ AF = 1
+ FC = .5
+ BV = 9.9999E+13
+ IBV = .001
+ )
*
.MODEL DLEAK D(
+ IS = 5.000E-15
+ RS = 0
+ N = 43
+ TT = 0
+ CJO = 0
+ VJ = 1
+ M = .5
+ EG = 10.1202914
+ XTI = 654
+ KF = 0
+ AF = 1
+ FC = .5
+ BV = 9.9999E+13
+ IBV = .001
+ )
*
.MODEL DFOR D (
+ IS = 1.649357E-15
+ RS = 0.405147
+ N = 1.027365
+ TT = 2.54E-7
+ CJO = 1.478778E-10
+ VJ = 0.4204929
+ M = 0.3186104
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.5
+ BV = 9.9999E+13
+ IBV = .001
+ )
.ENDS
*
.model D1N5248 D(Is=7.021f Rs=5.619 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=60p M=.4093
+ Vj=.75 Fc=.5 Isr=1.461n Nr=2 Bv=18 Ibv=23.333m Nbv=1.2074
+ Ibvl=215.7u Nbvl=.71348 Tbv1=888.89u)
* Motorola pid=1N5248 case=DO-35
* 89-9-18 gjg
* Vz = 18 @ 7mA, Zz = 37 @ 1mA, Zz = 11 @ 5mA, Zz = 7.9 @ 20mA
* GENERIC FUNCTIONAL EQUIVALENT = 1N5248
* TYPE: DIODE
* SUBTYPE: VOLTAGE REG GP
* THIS IS A TEMPERATURE TRACKING MODEL WHICH WAS CONSTRUCTED
* FROM PRODUCT SPECIFICATION LIMITS AND PREVIOUSLY EXTRACTED MODELS.
* THE MODEL IS INTENDED FOR USE FROM -55 C TO 125 C. NO RADIATION EFFECTS
* ARE INCLUDED. SIMULATIONS USING THIS MODEL REPRESENT THE RESPONSES OF
* NOMINAL DEVICES AND SIMULATIONS ARE ACCURATE WITHIN THE LIMITS OF THE
* PRODUCT SPECIFICATION.
*
*** CAUTION: THE SIMULATED TRR RANGES FROM 28 TO 38% OF THE MEASURED TRR.
* THIS COULD POTENTIALLY LEAD TO ERRORS IN CIRCUIT. SIMULATIONS IF
* USED IN HIGH SPEED SWITCHING APPLICATIONS.
.SUBCKT D1N5248/TEMP 1 3
D1 1 3 DFOR
D2 3 2 DBLOCK
D3 3 1 DLEAK
IC 1 2 1.76
RC 2 1 10 TC = 7.93E-04 , -3.14E-08
*
.MODEL DBLOCK D(
+ IS = 1E-12
+ RS = 0
+ N = 0.716
+ TT = 0
+ CJO = 0
+ VJ = 1
+ M = .5
+ EG = .1
+ XTI = -3.86
+ KF = 0
+ AF = 1
+ FC = .5
+ BV = 9.9999E+13
+ IBV = .001
+ )
*
.MODEL DLEAK D(
+ IS = 1.000E-12
+ RS = 0
+ N = 103
+ TT = 0
+ CJO = 0
+ VJ = 1
+ M = .5
+ EG = 34.3
+ XTI = 309
+ KF = 0
+ AF = 1
+ FC = .5
+ BV = 9.9999E+13
+ IBV = .001
+ )
*
.MODEL DFOR D (
+ IS = 1.68868E-15
+ RS = 0.2636432
+ N = 1.0213594
+ TT = 2.9023E-7
+ CJO = 1.13597E-10
+ VJ = 0.6016557
+ M = 0.3406627
+ EG = 1.11
+ XTI = 3
+ KF = 0
+ AF = 1
+ FC = 0.5
+ BV = 1E5
+ IBV = .001
+ )
.ENDS
*
*** From file FQA36P15.lib
* PSpice Model Editor - Version 9.2
*
**************** Power Discrete MOSFET Electrical Circuit Model ******************
* Product Name: FQA36P15
* 150V P-Channel MOSFET and TO-3P
*---------------------------------------------------------------------------------
.SUBCKT FQA36P15 20 10 30
Rg 10 1 0.04
M1 2 1 3 3 DMOS L=1u W=1u
.MODEL DMOS PMOS (VTO={-3.6*{-0.00088*TEMP+1.022}} KP={19.5*{-0.00028*TEMP+1.007}}
+ THETA=0.0424 VMAX=1.5E5 LEVEL=3)
Cgs 1 3 2440p
Rd 20 4 0.06 TC=0.0085
Dds 4 3 DDS
.MODEL DDS D(BV={150*{0.00075*TEMP+0.98125}} M=0.48 CJO=600p VJ=0.61)
Dbody 20 3 DBODY
.MODEL DBODY D(IS=8.5E-12 N=1.0 RS=0.013 EG=1.19 TT=198n)
Ra 4 2 0.0152 TC=0.0085
Rs 3 5 0.0012
Ls 5 30 1n
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1)
Cgdmax 7 4 3300p
Rcgd 7 4 1E7
Dgd 4 6 DGD
Rdgd 4 6 1E7
.MODEL DGD D(M=0.62 CJO=3300p VJ=0.52)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS
*--------------------------------------------------------------------------------
* Creation : Nov.-24-2003
* Fairchild Semiconductor
*
*** From file FQA46N15.lib
*FQA46N15 150V N-CHANNEL DMOSFET ELECTRICAL PARAMETERS
*------------------------------------------------------------------------------------
.SUBCKT FQA46N15 20 10 30
Rg 10 1 1
M1 2 1 3 3 DMOS L=1u W=1u
.MODEL DMOS NMOS (VTO={3.62*{-0.00097*TEMP+1.02425}} KP={38.0*{-0.000095*TEMP+1.002375}}
+ THETA=0.056 VMAX=1.35E5 LEVEL=3)
Cgs 1 3 2400p
Rd 20 4 15m TC=0.013
Dds 3 4 DDS
.MODEL DDS D(BV={150*{0.00896*TEMP+0.776}} M=0.5 CJO=420p VJ=0.8)
Dbody 3 20 DBODY
.MODEL DBODY D(IS=9.2E-13 N=1.0 RS=7.8m EG=1.07 TT=130n)
Ra 4 2 9.6m TC=0.013
Rs 3 5 0.3m
Ls 5 30 0.55n
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1)
Cgdmax 7 4 5385p
Rcgd 7 4 10meg
Dgd 6 4 DGD
Rdgd 4 6 10meg
.MODEL DGD D(M=0.85 CJO=5385p VJ=0.5)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS FQA46N15
*------------------------------------------------------------------------------------
*FAIRCHILD CASE: TO-3P PID: FQA46N15
*MAY-02-2002 CREATION
*** From file FQP3P20.lib
* FQP3P20 200V P-CHANNEL DMOSFET ELECTRICAL PARAMETERS
*------------------------------------------------------------------------------------
.SUBCKT FQP3P20 20 10 30
Rg 10 1 1
M1 2 1 3 3 DMOS L=1u W=1u
.MODEL DMOS PMOS (VTO={-4.95*{-0.00095*TEMP+1.02375}} KP={1.15*{-0.00075*TEMP+1.01875}}
+ THETA=0.04 VMAX=2.7E5 LEVEL=3)
Cgs 1 3 182.5p
Rd 20 4 1350m TC=0.01
Dds 4 3 DDS
.MODEL DDS D(BV={200*{0.0008*TEMP+0.98}} M=0.5 CJO=37.5p VJ=0.8)
Dbody 20 3 DBODY
.MODEL DBODY D(IS=1.2E-14 N=1.07 RS=78.0m EG=1.54 TT=100n)
Ra 4 2 412m TC=0.01
Rs 3 5 41.2m
Ls 5 30 1.97n
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1)
Cgdmax 7 4 266p
Rcgd 7 4 10meg
Dgd 4 6 DGD
Rdgd 4 6 10meg
.MODEL DGD D(M=0.7 CJO=266p VJ=0.55)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
.ENDS FQP3P20
*------------------------------------------------------------------------------------
* FAIRCHILD CASE: TO-220 PID: FQP3P20
* SEP-03-2001 CREATION
*** From file FQP3N30.lib
*
**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FQP3N10
** 100V N-Channel MOSFET and TO-220
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FQP3N30 2 1 3
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Ebreak 11 7 17 7 330
Lgate 1 9 1.125e-9
Ldrain 2 5 1.440e-9
Lsource 3 7 8.431e-10
RLgate 1 9 11.25
RLdrain 2 5 14.4
RLsource 3 7 8.43
Rgate 9 6 0.5
It 7 17 1
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=1.08e-3 TC2=-1.02e-6)
.MODEL DbodyMOD D (IS=4.05e-13 N=1 RS=3.62e-2 TRS1=2.05e-3 TRS2=5.0e-7
+ CJO=2.45e-10 M=0.51 VJ=0.47 TT=3.02e-7 XTI=3 EG=1.12)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1.0e-6)
Rdrain 5 16 RdrainMOD 1.65
.MODEL RdrainMOD RES (TC1=7.5e-3 TC2=1.39e-5)
M_BSIM3 16 6 7 7 Bsim3 W=0.45 L=2.0e-6 NRS=1
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0
+ TOX=1480e-10 XJ=1.4e-6 NCH=1.13e17
+ U0=700 VSAT=5.0e5 DROUT=1.0
+ DELTA=0.10 PSCBE2=0 RSH=5.09e-3
+ VTH0=4.30 VOFF=-0.1 NFACTOR=1.1
+ LINT=1.05e-7 DLC=1.05e-7 FC=0.5
+ CGSO=1.2e-15 CGSL=0 CGDO=8.0e-12
+ CGDL=3.91e-10 CJ=0 CF=0
+ CKAPPA=0.12 KT1=-1.88 KT2=0
+ UA1=-2.2e-9 NJ=10 )
.ENDS
*Typ RED GaAs LED: Vf=1.7V Vr=4V If=40mA trr=3uS
.MODEL LED1 D (IS=93.2P RS=42M N=3.73 BV=4 IBV=10U
+ CJO=2.97P VJ=.75 M=.333 TT=4.32U)
.model IRF610h VDMOS (Rg=20 Vto=4.30 Kp=0.5 Rs=35m Ksubthres=0.23 Mtriode=0.35 Rd=1 Lambda=3m Bex=-2.4 Vtotc=-6m Tksubthres1=4m Trs1=3.5m Trd1=5m Cgdmax=260p Cgdmin=10p a=0.35 Cgs=125p Cjo=120p m=0.3 VJ=0.75 IS=4n N=1.5 Eg=1.05 Rb=0.06 Trb1=2.5m Vds=200 Ron=1.5 Qg=8nC mfg=VishIH1907)
.model IRF9610 vdmos pchan VTO=-3.667 RS=0.47274 KP=0.813 RD=1.733 RG=10 mfg=International_Rectifier Vds=-200 CGDMAX=4.05E-10 CGDMIN=3.00p Cjo=3.06E-11 IS=6.17e-61 Rb=0.267 TT=1.762e-06 Cgs=1.53E-10 Ksubthres=0.1
* This one is definitely wrong, see Vto
*.model IRF9610h VDMOS (pchan Rg=6 Vto=+3.76 Kp=0.35 Rs=68m Ksubthres=0.2 Mtriode=0.5 Rd=2 Lambda=4m Bex=-1 Vtotc=+2.5m Tksubthres1=4m Trs1=3m Trd1=9m Cgdmax=120p Cgdmin=15p a=0.26 Cgs=113p Cjo=207p m=0.4 VJ=2.5 IS=1.3f N=4.2 Eg=4.5 Rb=0.02 Trb1=1.3m Vds=-200 Ron=3 Qg=11nC mfg=VishIH1907)
* modified
.model IRF9610h VDMOS (pchan Rg=6 Vto=-3.76 Kp=0.35 Rs=68m Ksubthres=0.2 Mtriode=0.5 Rd=2 Lambda=4m Bex=-1 Vtotc=+2.5m Tksubthres1=4m Trs1=3m Trd1=9m Cgdmax=120p Cgdmin=15p a=0.26 Cgs=113p Cjo=207p m=0.4 VJ=2.5 IS=1.3f N=4.2 Eg=4.5 Rb=0.02 Trb1=1.3m Vds=-200 Ron=3 Qg=11nC mfg=VishIH1907)
.model IRF540 vdmos VTO=3.542 RS=0.03646 KP=35.149 RD=0.0291 RG=6 mfg=International_Rectifier Vds=100 CGDMAX=2.70n CGDMIN=4.00E-11 Cjo=4.76E-10 IS=1.32p Rb=0.01 TT=2.305e-07 Cgs=1.54E-09 Ksubthres=0.1
.model IRF9540 vdmos pchan VTO=-3.192 RS=0.05098 KP=13.966 RD=0.0985 RG=21.486 mfg=International_Rectifier Vds=-100 CGDMAX=2.00n CGDMIN=2.00E-11 Cjo=5.13E-10 IS=2.39e-27 Rb=0.0447 TT=1.465e-07 Cgs=1.27E-09 Ksubthres=0.1