Design of 6T, 8T and 10T SRAM Cells with Static Noise Margin Analysis
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Updated
Dec 9, 2022 - AGS Script
Design of 6T, 8T and 10T SRAM Cells with Static Noise Margin Analysis
This project implements a single-port RAM using Verilog. The design simulates a memory module with a single read/write port, supporting basic memory operations like data storage and retrieval. It includes testbenches for functional verification and timing analysis to ensure reliable operation.
Behavioral architecture of a read/write cycle controller for a DRAM chip.
PESU Sem 3: Mini project for Digital Design and Computer Organization
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